Yokoyama Shin

id (desc)

飛行時間測定法を用いた中速イオン散乱法の開発と半導体プロセス評価への応用

Creator	Yokoyama Shin \| Hirose Masataka \| Miyazaki Seiichi \| 桜田勇蔵
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Date of Issued

GaAs及びSi上への絶縁膜の形成

Creator	Yokoyama Shin
Journal
Date of Issued

電気光学材料を用いたリング共振器光スイッチのSiLSI上へのモノリシック集積

Creator	Yokoyama Shin
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Date of Issued

MOSトランジスタのソース・ドレイン近傍でのドーパント2次元拡がり測定の研究

Creator	Shibahara Kentaro \| Yokoyama Shin
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Date of Issued

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Creator	Nakajima Anri \| Yoshimoto Takashi \| Kidera Toshiro \| Obata Katsunori \| Yokoyama Shin \| Sunami Hideo \| Hirose Masataka
Journal	Applied Physics Letters Volume 77 Issue 18 pp. 2855 - 2857
Date of Issued	published_at 2000-10-30

Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy

Creator	Hansch Walter \| Nakajima Anri \| Yokoyama Shin
Journal	Applied Physics Letters Volume 75 Issue 11 pp. 1535 - 1537
Date of Issued	published_at 1999-09-13

Growth and electrical properties of atomic-layer deposited ZrO2 /Si-nitride stack gate dielectrics

Creator	Ishii Hiroyuki \| Nakajima Anri \| Yokoyama Shin
Journal	Journal of Applied Physics Volume 95 Issue 2 pp. 536 - 542
Date of Issued	published_at 2004-01-15

Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

Creator	Kawamura Kensaku \| Kidera Toshiro \| Nakajima Anri \| Yokoyama Shin
Journal	Journal of Applied Physics Volume 91 Issue 8 pp. 5213 - 5220
Date of Issued	published_at 2002-04-15

Monolithically integrated optical modulator based on polycrystalline Ba0.7Sr0.3TiO3 thin films

Creator	Xu Zhimou \| Suzuki Masato \| Tanushi Yuichiro \| Yokoyama Shin
Journal	Applied Physics Letters Volume 88 Issue 17
Date of Issued	published_at 2006-04-17

Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

Creator	Nakajima Anri \| Ito Yuhei \| Yokoyama Shin
Journal	Applied Physics Letters Volume 81 Issue 4 pp. 733 - 735
Date of Issued	published_at 2002-07-22

Fabrication of Si single-electron transistors having double SiO2 barriers

Creator	Ito Yuhei \| Hatano Tsuyoshi \| Nakajima Anri \| Yokoyama Shin
Journal	Applied Physics Letters Volume 80 Issue 24 pp. 4617 - 4619
Date of Issued	published_at 2002-06-17

Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures

Creator	Khosru Quazi Deen Mohd \| Nakajima Anri \| Yoshimoto Takashi \| Yokoyama Shin
Journal	Applied Physics Letters Volume 80 Issue 21 pp. 3952 - 3954
Date of Issued	published_at 2002-05-27

NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability

Creator	Nakajima Anri \| Khosru Quazi Deen Mohd \| Yoshimoto Takashi \| Kidera Toshirou \| Yokoyama Shin
Journal	Applied Physics Letters Volume 80 Issue 7 pp. 1252 - 1254
Date of Issued	published_at 2002-02-18

Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

Creator	Khosru Quazi Deen Mohd \| Nakajima Anri \| Yoshimoto Takashi \| Yokoyama Shin
Journal	Applied Physics Letters Volume 79 Issue 21 pp. 3488 - 3490
Date of Issued	published_at 2001-11-19

Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition

Creator	Nakajima Anri \| Yoshimoto Takashi \| Kidera Toshirou \| Yokoyama Shin
Journal	Applied Physics Letters Volume 79 Issue 5 pp. 665 - 667
Date of Issued	published_at 2001-07-30

Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4

Creator	Yokoyama Shin \| Ohba Kenji \| Nakajima Anri
Journal	Applied Physics Letters Volume 79 Issue 5 pp. 617 - 619
Date of Issued	published_at 2001-07-30

Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires

Creator	Yokoyama Shin \| Ohba Kenji \| Kawamura Kensaku \| Kidera Toshiro \| Nakajima Anri
Journal	Applied Physics Letters Volume 79 Issue 4 pp. 494 - 496
Date of Issued	published_at 2001-07-23