Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires
Journal of Applied Physics 91 巻 8 号
5213-5220 頁
2002-04-15 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires
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| 作成者 |
Kawamura Kensaku
Kidera Toshiro
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| 収録物名 |
Journal of Applied Physics
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| 巻 | 91 |
| 号 | 8 |
| 開始ページ | 5213 |
| 終了ページ | 5220 |
| 抄録 |
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-Si) wires were fabricated by low-pressure chemical vapor deposition. The electrical conduction mechanism has been investigated at low temperatures (down to ~5 K), and observation by transmission electron microscopy (TEM) was carried out. Single-electron effects such as Coulomb oscillations have been observed at temperatures up to 80 K. The size of the island in the poly-Si wires was estimated from the electrical properties, and it was in the same order as the grain size of the poly-Si measured by TEM. A maximum tunnel barrier height of ~26 meV of the poly-Si grain boundary is obtained from the temperature dependence of the conductance of the sample. A model for the electronic conduction through multiple islands was proposed from the width dependence of their electrical properties.
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Institute of Physics
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| 発行日 | 2002-04-15 |
| 権利情報 |
Copyright (c) 2002 American Institute of Physics.
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0021-8979
[DOI] 10.1063/1.1464650
[NCID] AA00693547
[DOI] http://dx.doi.org/10.1063/1.1464650
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