Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires
Journal of Applied Physics Volume 91 Issue 8
Page 5213-5220
published_at 2002-04-15
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| File | |
| Title ( eng ) |
Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires
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| Creator |
Kawamura Kensaku
Kidera Toshiro
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| Source Title |
Journal of Applied Physics
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| Volume | 91 |
| Issue | 8 |
| Start Page | 5213 |
| End Page | 5220 |
| Abstract |
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-Si) wires were fabricated by low-pressure chemical vapor deposition. The electrical conduction mechanism has been investigated at low temperatures (down to ~5 K), and observation by transmission electron microscopy (TEM) was carried out. Single-electron effects such as Coulomb oscillations have been observed at temperatures up to 80 K. The size of the island in the poly-Si wires was estimated from the electrical properties, and it was in the same order as the grain size of the poly-Si measured by TEM. A maximum tunnel barrier height of ~26 meV of the poly-Si grain boundary is obtained from the temperature dependence of the conductance of the sample. A model for the electronic conduction through multiple islands was proposed from the width dependence of their electrical properties.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 2002-04-15 |
| Rights |
Copyright (c) 2002 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0021-8979
[DOI] 10.1063/1.1464650
[NCID] AA00693547
[DOI] http://dx.doi.org/10.1063/1.1464650
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