Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions
Applied Physics Letters 81 巻 4 号
733-735 頁
2002-07-22 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions
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| 作成者 |
Ito Yuhei
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| 収録物名 |
Applied Physics Letters
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| 巻 | 81 |
| 号 | 4 |
| 開始ページ | 733 |
| 終了ページ | 735 |
| 抄録 |
Uniformly doped Si single-electron transistors consisting of a one-dimensional regular array of multiple tunnel junctions (MTJs) and islands have been fabricated. The Coulomb blockade effect is found to play an important role in carrier conduction in the MTJ system at low temperatures (6 K). The conduction mechanism can be interpreted well by considering soliton. The soliton extends less than three islands in our MTJs, and the energy of a single soliton is found to be 0.024 eV from an analysis of low-temperature current–voltage characteristics. For high-temperature operation, it is effective to reduce the parasitic capacitance of each island, which leads to an increase in soliton length.
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Institute of Physics
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| 発行日 | 2002-07-22 |
| 権利情報 |
Copyright (c) 2002 American Institute of Physics.
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0003-6951
[DOI] 10.1063/1.1492318
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.1492318
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