Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region
Applied Physics Letters 86 巻 8 号
2005-02-21 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region
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| 作成者 |
Zhu Shiyang
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| 収録物名 |
Applied Physics Letters
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| 巻 | 86 |
| 号 | 8 |
| 抄録 |
By stressing metal-oxide-semiconductor field-effect transistors with ultrathin silicon dioxide or oxynitride gate dielectrics under square wave form voltage at the MHz region, an abnormal enhancement of interface trap generation in the midchannel region has been observed at some special frequencies. A hypothesis, including self-accelerating interface trap generation originated from the positive feedback of a charge pumping current to be contributed by the stress-induced near-interface oxide traps and a resonant tunneling via the near interface oxide trap states at those frequencies, is proposed to explain the observed phenomenon.
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Institute of Physics
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| 発行日 | 2005-02-21 |
| 権利情報 |
Copyright (c) 2005 American Institute of Physics.
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0003-6951
[DOI] 10.1063/1.1857083
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.1857083
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