Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region
Applied Physics Letters Volume 86 Issue 8
published_at 2005-02-21
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| File | |
| Title ( eng ) |
Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region
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| Creator |
Zhu Shiyang
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| Source Title |
Applied Physics Letters
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| Volume | 86 |
| Issue | 8 |
| Abstract |
By stressing metal-oxide-semiconductor field-effect transistors with ultrathin silicon dioxide or oxynitride gate dielectrics under square wave form voltage at the MHz region, an abnormal enhancement of interface trap generation in the midchannel region has been observed at some special frequencies. A hypothesis, including self-accelerating interface trap generation originated from the positive feedback of a charge pumping current to be contributed by the stress-induced near-interface oxide traps and a resonant tunneling via the near interface oxide trap states at those frequencies, is proposed to explain the observed phenomenon.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 2005-02-21 |
| Rights |
Copyright (c) 2005 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.1857083
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.1857083
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