Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures
Applied Physics Letters Volume 80 Issue 21
Page 3952-3954
published_at 2002-05-27
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| File | |
| Title ( eng ) |
Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures
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| Creator |
Khosru Quazi Deen Mohd
Yoshimoto Takashi
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| Source Title |
Applied Physics Letters
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| Volume | 80 |
| Issue | 21 |
| Start Page | 3952 |
| End Page | 3954 |
| Abstract |
A simple and effective method for the extraction of interface trap distribution in ultrathin metal– oxide–semiconductor (MOS) structures is presented. By a critical analysis of bipolar-pulse-induced currents through MOS capacitors, a technique is developed to determine the energy distribution of the interface traps without requiring the knowledge of surface potential and doping profile in the semiconductor. The proposed technique can be efficiently used to probe electrical stress, hot-carrier, and radiation-induced interfacial degradations in ultrathin MOS structures.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 2002-05-27 |
| Rights |
Copyright (c) 2002 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.1481194
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.1481194
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