Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4
Applied Physics Letters Volume 79 Issue 5
Page 617-619
published_at 2001-07-30
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| File | |
| Title ( eng ) |
Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4
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| Creator |
Ohba Kenji
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| Source Title |
Applied Physics Letters
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| Volume | 79 |
| Issue | 5 |
| Start Page | 617 |
| End Page | 619 |
| Abstract |
Atomic-layer deposition of Si on SiO2 with a self-limiting growth mode was achieved at substrate temperatures between 355 and 385 °C by means of alternate supply of Si2H6 and SiCl4 gas sources. The growth rate was saturated at 2 ML per cycle at these temperatures and for Si2H6 exposure time over 120 s. The smooth surface (∼0.26 nm in arithmetic average roughness) was obtained under the self-limiting condition irrespective of a film thickness up to 6.5 nm.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 2001-07-30 |
| Rights |
Copyright (c) 2001 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.1389508
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.1389508
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