Local transfer of single crystalline silicon films to glass substrate at low temperature using meniscus force and fabrication of high-performance thin-film transistors

メニスカス力を利用したガラス基板への単結晶シリコン膜の低温局所転写及び高性能薄膜トランジスタの作製

Akazawa Muneki

Electrical engineering [ 540 ]

eng

・Muneki Akazawa, Kohei Sakaike, Shogo Nakamura, and Seiichiro Higashi; Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique; Japanese Journal of Applied Physics, 53, 108002-1－108002-3 (2014). (doi: 10.7567/JJAP.53.108002) references

・Muneki Akazawa, Kohei Sakaike, and Seiichiro Higashi; Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass; Japanese Journal of Applied Physics 54, 086503-1－086503-7 (2015). (doi: 10.7567/JJAP.54.086503) references

・Kohei Sakaike, Muneki Akazawa, Shogo Nakamura, and Seiichiro Higashi; Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force; Applied Physics Letters, 103, 233510-1－233510-4 (2013). (doi: 10.1063/1.4837696) references

・Kohei Sakaike, Shogo Nakamura, Muneki Akazawa, and Seiichiro Higashi; Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force; Japanese Journal of Applied Physics, 53, 018004-1－018004-3 (2014). (doi: 10.7567/JJAP.53.018004) references

・Kohei Sakaike, Muneki Akazawa, Akitoshi Nakagawa, and Seiichiro Higashi; Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique; ECS Transactions 64(10), 17-22 (2014). (doi: 10.1149/06410.0017ecst) references

・Kohei Sakaike, Muneki Akazawa, Akitoshi Nakagawa, and Seiichiro Higashi; Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates; Japanese Journal of Applied Physics, 54, 04DA08-1－04DA08-5 (2015). (doi: 10.7567/JJAP.54.04DA08) references

[DOI] http://doi.org/10.7567/JJAP.53.108002 references

[DOI] http://doi.org/10.7567/JJAP.54.086503 references

[DOI] http://doi.org/10.1063/1.4837696 references

[DOI] http://doi.org/10.7567/JJAP.53.018004 references

[DOI] http://doi.org/10.1149/06410.0017ecst references

[DOI] http://doi.org/10.7567/JJAP.54.04DA08 references

広島大学