Silicon Functional Nanoscale Structures and Bio/Ion-Sensor

シリコンナノ機能構造及びバイオ/イオンセンサーの研究

工藤 貴史

電気工学 [ 540 ]

英語

Copyright(c) by Author

[作成日] 2014-11-21

Takashi Kudo, Toshihiro Kasama, Takeshi Ikeda, Yumehiro Hata, Shiho Tokonami, Shin Yokoyama, Takamaro Kikkawa, Hideo Sunami, Tomohiro Ishikawa, Masato Suzuki, Kiyoshi Okuyama, Tetsuo Tabei, Kensaku Ohkura, Yasuhisa Kayaba, Yuichiro Tanushi, Yoshiteru Amemiya, Yoshinori Cho,Tomomi Monzen, Yuji Murakami, Akio Kuroda, and Anri Nakajima; Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing; Japanese Journal of Applied physics, 48, 06FJ04-1 - 06FJ04-4 (2009) (doi: 10.1143/JJAP.48.06FJ04) ～を参照している

Takashi Kudo and Anri Nakajima; Highly sensitive ion detection using Si single-electron transistors; Applied Physics Letters, 98, 123705-1 - 123705-3 (2011) (doi: 10.1063/1.3569148) ～を参照している

Takashi Kudo and Anri Nakajima; Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip; Applied Physics Letters, 100, 023704-1 - 023704-3 (2012) (doi: 10.1063/1.3676664) ～を参照している

Anri Nakajima, Takashi Kudo and Sadaharu Furuse; Biomolecule detection based on Si single-electron transistors for practical use; Applied Physics Letters, 103, 043702-1 - 043702-4 (2013) (doi: 10.1063/1.4816267) ～を参照している

Takashi Kudo, Takashi Ito, and Anri Nakajima; Characteristics of metal-oxide-semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation; Journal of Vacuum Science & Technology B, 31, 012206-1 - 012206-7 (2013) (doi: 10.1116/1.4773576) ～を参照している

Anri Nakajima, Takashi Kudo, and Takashi Ito; Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation; Applied Physics Letters, 98, 053501-1 - 053501-3 (2011) (doi: 10.1063/1.3549178) ～を参照している

広島大学