Silicon Functional Nanoscale Structures and Bio/Ion-Sensor

シリコンナノ機能構造及びバイオ/イオンセンサーの研究

工藤 貴史

Electrical engineering [ 540 ]

eng

Copyright(c) by Author

[Created] 2014-11-21

Takashi Kudo, Toshihiro Kasama, Takeshi Ikeda, Yumehiro Hata, Shiho Tokonami, Shin Yokoyama, Takamaro Kikkawa, Hideo Sunami, Tomohiro Ishikawa, Masato Suzuki, Kiyoshi Okuyama, Tetsuo Tabei, Kensaku Ohkura, Yasuhisa Kayaba, Yuichiro Tanushi, Yoshiteru Amemiya, Yoshinori Cho,Tomomi Monzen, Yuji Murakami, Akio Kuroda, and Anri Nakajima; Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing; Japanese Journal of Applied physics, 48, 06FJ04-1 - 06FJ04-4 (2009) (doi: 10.1143/JJAP.48.06FJ04) references

Takashi Kudo and Anri Nakajima; Highly sensitive ion detection using Si single-electron transistors; Applied Physics Letters, 98, 123705-1 - 123705-3 (2011) (doi: 10.1063/1.3569148) references

Takashi Kudo and Anri Nakajima; Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip; Applied Physics Letters, 100, 023704-1 - 023704-3 (2012) (doi: 10.1063/1.3676664) references

Anri Nakajima, Takashi Kudo and Sadaharu Furuse; Biomolecule detection based on Si single-electron transistors for practical use; Applied Physics Letters, 103, 043702-1 - 043702-4 (2013) (doi: 10.1063/1.4816267) references

Takashi Kudo, Takashi Ito, and Anri Nakajima; Characteristics of metal-oxide-semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation; Journal of Vacuum Science & Technology B, 31, 012206-1 - 012206-7 (2013) (doi: 10.1116/1.4773576) references

Anri Nakajima, Takashi Kudo, and Takashi Ito; Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation; Applied Physics Letters, 98, 053501-1 - 053501-3 (2011) (doi: 10.1063/1.3549178) references

広島大学