Mn 3d partial density of states in Ga12xMnxAs studied by resonant photoemission spectroscopy

Physical Review B - Condensed Matter and Materials Physics 59 巻 4 号 R2486-R2489 頁 1999-01-15 発行
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タイトル ( eng )
Mn 3d partial density of states in Ga12xMnxAs studied by resonant photoemission spectroscopy
作成者
Okabayashi Jun
Mizokawa Takashi
Fujimori Atsushi
Hayashi Toshiaki
Tanaka Masaaki
収録物名
Physical Review B - Condensed Matter and Materials Physics
59
4
開始ページ R2486
終了ページ R2489
抄録
We have obtained the Mn 3d partial density of states in Ga1-xMnxAs using the resonance photoemission technique as well as by means of the difference between Ga1-xMnxAs and GaAs. We have observed a strong satellite structure on the higher binding energy side of the main peak, as in Mn-doped II-VI compounds such as Cd1-xMnxTe. Based on analysis using configuration-interaction calculation for a MnAs4 cluster, we could ascribe the spectral features to strong Mn 3d-As 4p hybridization and Mn 3d-3d Coulomb interaction.
言語
英語
資源タイプ 学術雑誌論文
出版者
American Physical Society
発行日 1999-01-15
権利情報
Copyright (c) 1999 The American Physical Society.
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 0163-1829
[DOI] 10.1103/PhysRevB.59.R2486
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.60.2579