Mn 3d partial density of states in Ga12xMnxAs studied by resonant photoemission spectroscopy
Physical Review B - Condensed Matter and Materials Physics Volume 59 Issue 4
Page R2486-R2489
published_at 1999-01-15
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| File | |
| Title ( eng ) |
Mn 3d partial density of states in Ga12xMnxAs studied by resonant photoemission spectroscopy
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| Creator |
Okabayashi Jun
Mizokawa Takashi
Fujimori Atsushi
Hayashi Toshiaki
Tanaka Masaaki
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 59 |
| Issue | 4 |
| Start Page | R2486 |
| End Page | R2489 |
| Abstract |
We have obtained the Mn 3d partial density of states in Ga1-xMnxAs using the resonance photoemission technique as well as by means of the difference between Ga1-xMnxAs and GaAs. We have observed a strong satellite structure on the higher binding energy side of the main peak, as in Mn-doped II-VI compounds such as Cd1-xMnxTe. Based on analysis using configuration-interaction calculation for a MnAs4 cluster, we could ascribe the spectral features to strong Mn 3d-As 4p hybridization and Mn 3d-3d Coulomb interaction.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 1999-01-15 |
| Rights |
Copyright (c) 1999 The American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0163-1829
[DOI] 10.1103/PhysRevB.59.R2486
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.60.2579
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