Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn
Physical Review B - Condensed Matter and Materials Physics 59 巻 21 号
13 878-13 881 頁
1999-06-01 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn
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| 作成者 |
Echizen Yuji
Yoshino Takenobu
Kobayashi Katsushi
Nakamoto Go
Fujii Hironobu
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| 収録物名 |
Physical Review B - Condensed Matter and Materials Physics
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| 巻 | 59 |
| 号 | 21 |
| 開始ページ | 13 878 |
| 終了ページ | 13 881 |
| 抄録 |
The effect of doping in CeNiSn has been studied by the measurements of electrical resistivity, Hall coefficient and magnetic susceptibility for single crystals of CeNi1-xTxSn (T=Co, Cu, and Pt) and Ce1-yLayNiSn (x,y = 0.01 and 0.05). All these impurities are found to increase the residual resistivity by several times up to 1 mΩ cm for x or y = 0.01, while for x or y = 0.05 the resistivities along the orthorhombic b and c axes saturate to values smaller than those for 0.01. Furthermore, the low-temperature increase in the Hall mobility of CeNiSn was found to be strongly suppressed in a similar way by all the impurities. These results indicate that residual carriers in CeNiSn with an anisotropic gap are immobilized by any impurity substituted either in the 4f site or the non-4f site.
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Physical Society
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| 発行日 | 1999-06-01 |
| 権利情報 |
Copyright (c) 1999 The American Physical Society.
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.59.13878
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.55.R692
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