Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn

Physical Review B - Condensed Matter and Materials Physics Volume 59 Issue 21 Page 13 878-13 881 published_at 1999-06-01
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Title ( eng )
Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn
Creator
Echizen Yuji
Yoshino Takenobu
Kobayashi Katsushi
Nakamoto Go
Fujii Hironobu
Source Title
Physical Review B - Condensed Matter and Materials Physics
Volume 59
Issue 21
Start Page 13 878
End Page 13 881
Abstract
The effect of doping in CeNiSn has been studied by the measurements of electrical resistivity, Hall coefficient and magnetic susceptibility for single crystals of CeNi1-xTxSn (T=Co, Cu, and Pt) and Ce1-yLayNiSn (x,y = 0.01 and 0.05). All these impurities are found to increase the residual resistivity by several times up to 1 mΩ cm for x or y = 0.01, while for x or y = 0.05 the resistivities along the orthorhombic b and c axes saturate to values smaller than those for 0.01. Furthermore, the low-temperature increase in the Hall mobility of CeNiSn was found to be strongly suppressed in a similar way by all the impurities. These results indicate that residual carriers in CeNiSn with an anisotropic gap are immobilized by any impurity substituted either in the 4f site or the non-4f site.
Language
eng
Resource Type journal article
Publisher
American Physical Society
Date of Issued 1999-06-01
Rights
Copyright (c) 1999 The American Physical Society.
Publish Type Version of Record
Access Rights open access
Source Identifier
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.59.13878
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.55.R692