Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn
Physical Review B - Condensed Matter and Materials Physics Volume 59 Issue 21
Page 13 878-13 881
published_at 1999-06-01
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| File | |
| Title ( eng ) |
Impurity-induced localization of quasiparticles in the presence of a pseudogap in CeNiSn
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| Creator |
Echizen Yuji
Yoshino Takenobu
Kobayashi Katsushi
Nakamoto Go
Fujii Hironobu
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 59 |
| Issue | 21 |
| Start Page | 13 878 |
| End Page | 13 881 |
| Abstract |
The effect of doping in CeNiSn has been studied by the measurements of electrical resistivity, Hall coefficient and magnetic susceptibility for single crystals of CeNi1-xTxSn (T=Co, Cu, and Pt) and Ce1-yLayNiSn (x,y = 0.01 and 0.05). All these impurities are found to increase the residual resistivity by several times up to 1 mΩ cm for x or y = 0.01, while for x or y = 0.05 the resistivities along the orthorhombic b and c axes saturate to values smaller than those for 0.01. Furthermore, the low-temperature increase in the Hall mobility of CeNiSn was found to be strongly suppressed in a similar way by all the impurities. These results indicate that residual carriers in CeNiSn with an anisotropic gap are immobilized by any impurity substituted either in the 4f site or the non-4f site.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 1999-06-01 |
| Rights |
Copyright (c) 1999 The American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.59.13878
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.55.R692
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