Effects of valence fluctuation and pseudogap formation on phonon thermal conductivity of Ce-based compounds with ε-TiNiSi-type structure
Physical Review B - Condensed Matter and Materials Physics 66 巻 22 号
224304-1-224304-6 頁
2002-12-19 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Effects of valence fluctuation and pseudogap formation on phonon thermal conductivity of Ce-based compounds with ε-TiNiSi-type structure
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| 作成者 |
Sasakawa Tetsuya
Suemitsu Toshiaki
Echizen Yuji
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| 収録物名 |
Physical Review B - Condensed Matter and Materials Physics
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| 巻 | 66 |
| 号 | 22 |
| 開始ページ | 224304-1 |
| 終了ページ | 224304-6 |
| 抄録 |
We have measured the thermal conductivity of isostructural compounds CePtSn, CeNiSn, CeRhSb, and CeRhAs with the orthorhombic ε-TiNiSi-type structure. It is found that the phonon thermal conductivity is reduced in a systematic way with increasing Kondo temperature TK. The scattering of phonons by valence fluctuations should play a dominant role in such a reduction. The gap formation in the electronic density of states enhances the phonon thermal conductivity significantly in CeRhAs with a gap width of 280 K, while it is weak in CeNiSn or CeRhSb with a pseudogap of 20-30 K. A phenomenological model is proposed for the unusual temperature dependence of phonon thermal conductivity by taking account of the strong dependence of the electron-phonon scattering rate on both TK and the energy gap.
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Physical Society
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| 発行日 | 2002-12-19 |
| 権利情報 |
Copyright (c) 2002 The American Physical Society.
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.66.224304
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.66.224304
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