Effects of valence fluctuation and pseudogap formation on phonon thermal conductivity of Ce-based compounds with ε-TiNiSi-type structure
Physical Review B - Condensed Matter and Materials Physics Volume 66 Issue 22
Page 224304-1-224304-6
published_at 2002-12-19
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| File | |
| Title ( eng ) |
Effects of valence fluctuation and pseudogap formation on phonon thermal conductivity of Ce-based compounds with ε-TiNiSi-type structure
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| Creator |
Sasakawa Tetsuya
Suemitsu Toshiaki
Echizen Yuji
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 66 |
| Issue | 22 |
| Start Page | 224304-1 |
| End Page | 224304-6 |
| Abstract |
We have measured the thermal conductivity of isostructural compounds CePtSn, CeNiSn, CeRhSb, and CeRhAs with the orthorhombic ε-TiNiSi-type structure. It is found that the phonon thermal conductivity is reduced in a systematic way with increasing Kondo temperature TK. The scattering of phonons by valence fluctuations should play a dominant role in such a reduction. The gap formation in the electronic density of states enhances the phonon thermal conductivity significantly in CeRhAs with a gap width of 280 K, while it is weak in CeNiSn or CeRhSb with a pseudogap of 20-30 K. A phenomenological model is proposed for the unusual temperature dependence of phonon thermal conductivity by taking account of the strong dependence of the electron-phonon scattering rate on both TK and the energy gap.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 2002-12-19 |
| Rights |
Copyright (c) 2002 The American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.66.224304
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.66.224304
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