Quantum Maxwell-Bloch equations for spatially inhomogeneous semiconductor lasers

Physical Review A. Atomic, Molecular, and Optical Physics 59 巻 3 号 2342-2358 頁 1999-03 発行
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タイトル ( eng )
Quantum Maxwell-Bloch equations for spatially inhomogeneous semiconductor lasers
作成者
Hess Ortwin
収録物名
Physical Review A. Atomic, Molecular, and Optical Physics
59
3
開始ページ 2342
終了ページ 2358
抄録
We present quantum Maxwell-Bloch equations (QMBE) for spatially inhomogeneous semiconductor laser devices. The QMBE are derived from fully quantum mechanical operator dynamics describing the interaction of the light field with the quantum states of the electrons and the holes near the band gap. By taking into account field-field correlations and field-dipole correlations, the QMBE include quantum noise effects, which cause spontaneous emission and amplified spontaneous emission. In particular, the source of spontaneous emission is obtained by factorizing the dipole-dipole correlations into a product of electron and hole densities. The QMBE are formulated for general devices, for edge emitting lasers and for vertical cavity surface emitting lasers, providing a starting point for the detailed analysis of spatial coherence in the near-field and far-field patterns of such laser diodes. Analytical expressions are given for the spectra of gain and spontaneous emission described by the QMBE. These results are applied to the case of a broad area laser, for which the frequency and carrier density dependent spontaneous emission factor β and the evolution of the far-field pattern near threshold are derived.
言語
英語
資源タイプ 学術雑誌論文
出版者
American Physical Society
発行日 1999-03
権利情報
Copyright (c) 1999 American Physical Society.
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 1094-1622
[DOI] 10.1103/PhysRevA.59.2342
[NCID] AA10764867
[DOI] http://dx.doi.org/10.1103/PhysRevA.59.2342