Cotunneling current in Si single-electron transistor based on multiple islands
Applied Physics Letters 89 巻 18 号
2006-10-30 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Cotunneling current in Si single-electron transistor based on multiple islands
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| 作成者 |
Ohkura Kensaku
Kitade Tetsuya
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| 収録物名 |
Applied Physics Letters
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| 巻 | 89 |
| 号 | 18 |
| 抄録 |
The authors fabricated highly doped Si single-electron transistors (SETs) with three islands. The valley current of the obtained Coulomb oscillation was systematically investigated in comparison with the cotunneling theory. The temperature dependence of the valley current was well described by the inelastic cotunneling theory above 40 K in the low drain voltage region. Since the inelastic cotunneling current was confirmed to be dominant in the high temperature region and is exponentially suppressed by multiplexing islands, SETs with multiple islands are promising for the practical application such as reliable circuit operations.
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Institute of Physics
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| 発行日 | 2006-10-30 |
| 権利情報 |
Copyright (c) 2006 American Institute of Physics.
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0003-6951
[DOI] 10.1063/1.2384802
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.2384802
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