Cotunneling current in Si single-electron transistor based on multiple islands
Applied Physics Letters Volume 89 Issue 18
published_at 2006-10-30
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| File | |
| Title ( eng ) |
Cotunneling current in Si single-electron transistor based on multiple islands
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| Creator |
Ohkura Kensaku
Kitade Tetsuya
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| Source Title |
Applied Physics Letters
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| Volume | 89 |
| Issue | 18 |
| Abstract |
The authors fabricated highly doped Si single-electron transistors (SETs) with three islands. The valley current of the obtained Coulomb oscillation was systematically investigated in comparison with the cotunneling theory. The temperature dependence of the valley current was well described by the inelastic cotunneling theory above 40 K in the low drain voltage region. Since the inelastic cotunneling current was confirmed to be dominant in the high temperature region and is exponentially suppressed by multiplexing islands, SETs with multiple islands are promising for the practical application such as reliable circuit operations.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 2006-10-30 |
| Rights |
Copyright (c) 2006 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.2384802
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.2384802
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