Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
Applied Physics Letters 86 巻 12 号
2005-05-21 発行
アクセス数 : 813 件
ダウンロード数 : 239 件
今月のアクセス数 : 3 件
今月のダウンロード数 : 1 件
この文献の参照には次のURLをご利用ください : https://ir.lib.hiroshima-u.ac.jp/00018598
| ファイル情報(添付) | |
| タイトル ( eng ) |
Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
|
| 作成者 |
Kitade Tetsuya
Ohkura Kensaku
|
| 収録物名 |
Applied Physics Letters
|
| 巻 | 86 |
| 号 | 12 |
| 抄録 |
We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined multiple islands. Highly doped SETs have the advantage of being easy to fabricate. Moreover, SETs with multiple islands provide a larger peak-to-valley current ratio (PVCR) than SETs with a single island. A PVCR for the Coulomb oscillation of up to 77 was observed at room temperature. This large PVCR is advantageous for circuit operations. We applied the Coulomb oscillation and multiple-gate input characteristics of only one SET to obtain an exclusive-OR operation at room temperature.
|
| 言語 |
英語
|
| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Institute of Physics
|
| 発行日 | 2005-05-21 |
| 権利情報 |
Copyright (c) 2005 American Institute of Physics.
|
| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0003-6951
[DOI] 10.1063/1.1894594
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.1894594
|
