Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
Applied Physics Letters Volume 86 Issue 12
published_at 2005-05-21
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| File | |
| Title ( eng ) |
Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
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| Creator |
Kitade Tetsuya
Ohkura Kensaku
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| Source Title |
Applied Physics Letters
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| Volume | 86 |
| Issue | 12 |
| Abstract |
We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined multiple islands. Highly doped SETs have the advantage of being easy to fabricate. Moreover, SETs with multiple islands provide a larger peak-to-valley current ratio (PVCR) than SETs with a single island. A PVCR for the Coulomb oscillation of up to 77 was observed at room temperature. This large PVCR is advantageous for circuit operations. We applied the Coulomb oscillation and multiple-gate input characteristics of only one SET to obtain an exclusive-OR operation at room temperature.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 2005-05-21 |
| Rights |
Copyright (c) 2005 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.1894594
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.1894594
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