Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
Applied Physics Letters Volume 75 Issue 11
Page 1535-1537
published_at 1999-09-13
アクセス数 : 893 件
ダウンロード数 : 184 件
今月のアクセス数 : 2 件
今月のダウンロード数 : 3 件
この文献の参照には次のURLをご利用ください : https://ir.lib.hiroshima-u.ac.jp/00018595
| File | |
| Title ( eng ) |
Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
|
| Creator |
Hansch Walter
|
| Source Title |
Applied Physics Letters
|
| Volume | 75 |
| Issue | 11 |
| Start Page | 1535 |
| End Page | 1537 |
| Abstract |
Core-level intensities for Si 2p, Si2s, O1s, and N1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect transistor fabrication.
|
| Language |
eng
|
| Resource Type | journal article |
| Publisher |
American Institute of Physics
|
| Date of Issued | 1999-09-13 |
| Rights |
Copyright (c) 1999 American Institute of Physics.
|
| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.124747
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.124747
|
