Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
Applied Physics Letters Volume 75 Issue 11
Page 1535-1537
published_at 1999-09-13
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| File | |
| Title ( eng ) |
Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
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| Creator |
Hansch Walter
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| Source Title |
Applied Physics Letters
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| Volume | 75 |
| Issue | 11 |
| Start Page | 1535 |
| End Page | 1537 |
| Abstract |
Core-level intensities for Si 2p, Si2s, O1s, and N1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect transistor fabrication.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 1999-09-13 |
| Rights |
Copyright (c) 1999 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.124747
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.124747
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