Merits of Heat Assist for Melt Laser Annealing

Shibahara Kentaro

Eto Takanori

Kurobe Ken-ichi

IEEE Transactions on Electron Devices

In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing laser-energy density for dopant activation and for improving heating uniformity of device structure. The absence of melting at the dopant profile tail for PMLA results in a egligibly small diffusion at this region. A high activation rate is achievableby melting the upper part of the amorphous-silicon layer. The obtained sheet resistance of 10-nm-deep junctions was about 700 Ω/sq. for both n+/p and p+/n junctions. These results imply that PMLA is applicable for much shallower junction formation.

CMOS

excimer laser

krypton flouride (KrF)

laser annealing (LA)

shallow junction

電気工学 [ 540 ]

英語

IEEE

Copyright (c) 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted componet of this word in other works must be obtained from the IEEE.

[ISSN] 0018-9383

[DOI] 10.1109/TED.2006.871870

[NCID] AA00667820

[DOI] http://dx.doi.org/10.1109/TED.2006.871870