Merits of Heat Assist for Melt Laser Annealing

Shibahara Kentaro

Eto Takanori

Kurobe Ken-ichi

IEEE Transactions on Electron Devices

In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing laser-energy density for dopant activation and for improving heating uniformity of device structure. The absence of melting at the dopant profile tail for PMLA results in a egligibly small diffusion at this region. A high activation rate is achievableby melting the upper part of the amorphous-silicon layer. The obtained sheet resistance of 10-nm-deep junctions was about 700 Ω/sq. for both n+/p and p+/n junctions. These results imply that PMLA is applicable for much shallower junction formation.

CMOS

excimer laser

krypton flouride (KrF)

laser annealing (LA)

shallow junction

Electrical engineering [ 540 ]

eng

IEEE

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[ISSN] 0018-9383

[DOI] 10.1109/TED.2006.871870

[NCID] AA00667820

[DOI] http://dx.doi.org/10.1109/TED.2006.871870