New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces
ECS Transactions Volume 2 Issue 1
Page 25-40
published_at 2006
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| File | |
| Title ( eng ) |
New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces
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| Creator |
Shiraishi Kenji
Akasaka Yasushi
Nakaoka Takashi
Ohmori Kenji
Ahmet Parhat
Torii Kazuyoshi
Watanabe Heiji
Chikyow Toyohiro
Nara Yasuo
Iwai Hiroshi
Yamada Keisaku
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| Source Title |
ECS Transactions
|
| Volume | 2 |
| Issue | 1 |
| Start Page | 25 |
| End Page | 40 |
| Abstract |
We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La2O3 based on this new concept.
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| Language |
eng
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| Resource Type | conference paper |
| Publisher |
The Electrochemical Society
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| Date of Issued | 2006 |
| Rights |
Copyright (c) 2006 The Electrochemical Society
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| Publish Type | Author’s Original |
| Access Rights | open access |
| Source Identifier |
[DOI] 10.1149/1.2193871
[NCID] BA78566750
[DOI] http://dx.doi.org/10.1149/1.2193871
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