High-pressure Raman study of the Ba-doped silicon clathrate Ba 24Si100 up to 27 GPa

Physical Review B - Condensed Matter and Materials Physics 71 巻 9 号 094108- 頁 2005-03-01 発行
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タイトル ( eng )
High-pressure Raman study of the Ba-doped silicon clathrate Ba 24Si100 up to 27 GPa
作成者
Shimizu Hiroyasu
Kume Tetsuji
Kuroda Toyoki
Sasaki Shigeo
収録物名
Physical Review B - Condensed Matter and Materials Physics
71
9
開始ページ 094108
抄録
High-pressure Raman scattering of type-III silicon clathrate Ba 24Si100 has been measured up to 27 GPa at room temperature. Low-frequency vibrational modes associated with Ba atoms inside three kinds of cages were found around 45-90 cm-1. The Si framework Raman bands were observed around 115-415 cm-1, which are altogether shifted toward lower frequencies as compared to those of type-I Ba 8Si46. High-pressure phase transition occurs at 6.5 GPa, which seems to be due to the structural distortion induced by the increasing guest(Ba)-host(Si) couplings. Ba24Si100 becomes irreversibly amorphous above 23 GPa. This pressure is lower than those of type-I Si clathrates, which suggests that type-III structure is less stable than type-I under high pressures.
NDC分類
物理学 [ 420 ]
言語
英語
資源タイプ 学術雑誌論文
出版者
American Physical Society
発行日 2005-03-01
権利情報
Copyright (c) 2005 American Physical Society
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[NCID] AA11187113
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.71.094108
[DOI] http://dx.doi.org/10.1103/PhysRevB.71.094108