High-pressure Raman study of the Ba-doped silicon clathrate Ba 24Si100 up to 27 GPa
Physical Review B - Condensed Matter and Materials Physics 71 巻 9 号
094108- 頁
2005-03-01 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
High-pressure Raman study of the Ba-doped silicon clathrate Ba 24Si100 up to 27 GPa
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| 作成者 |
Shimizu Hiroyasu
Kume Tetsuji
Kuroda Toyoki
Sasaki Shigeo
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| 収録物名 |
Physical Review B - Condensed Matter and Materials Physics
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| 巻 | 71 |
| 号 | 9 |
| 開始ページ | 094108 |
| 抄録 |
High-pressure Raman scattering of type-III silicon clathrate Ba 24Si100 has been measured up to 27 GPa at room temperature. Low-frequency vibrational modes associated with Ba atoms inside three kinds of cages were found around 45-90 cm-1. The Si framework Raman bands were observed around 115-415 cm-1, which are altogether shifted toward lower frequencies as compared to those of type-I Ba 8Si46. High-pressure phase transition occurs at 6.5 GPa, which seems to be due to the structural distortion induced by the increasing guest(Ba)-host(Si) couplings. Ba24Si100 becomes irreversibly amorphous above 23 GPa. This pressure is lower than those of type-I Si clathrates, which suggests that type-III structure is less stable than type-I under high pressures.
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| NDC分類 |
物理学 [ 420 ]
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Physical Society
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| 発行日 | 2005-03-01 |
| 権利情報 |
Copyright (c) 2005 American Physical Society
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[NCID] AA11187113
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.71.094108
[DOI] http://dx.doi.org/10.1103/PhysRevB.71.094108
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