High-pressure Raman study of the Ba-doped silicon clathrate Ba 24Si100 up to 27 GPa
Physical Review B - Condensed Matter and Materials Physics Volume 71 Issue 9
Page 094108-
published_at 2005-03-01
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| File | |
| Title ( eng ) |
High-pressure Raman study of the Ba-doped silicon clathrate Ba 24Si100 up to 27 GPa
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| Creator |
Shimizu Hiroyasu
Kume Tetsuji
Kuroda Toyoki
Sasaki Shigeo
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 71 |
| Issue | 9 |
| Start Page | 094108 |
| Abstract |
High-pressure Raman scattering of type-III silicon clathrate Ba 24Si100 has been measured up to 27 GPa at room temperature. Low-frequency vibrational modes associated with Ba atoms inside three kinds of cages were found around 45-90 cm-1. The Si framework Raman bands were observed around 115-415 cm-1, which are altogether shifted toward lower frequencies as compared to those of type-I Ba 8Si46. High-pressure phase transition occurs at 6.5 GPa, which seems to be due to the structural distortion induced by the increasing guest(Ba)-host(Si) couplings. Ba24Si100 becomes irreversibly amorphous above 23 GPa. This pressure is lower than those of type-I Si clathrates, which suggests that type-III structure is less stable than type-I under high pressures.
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| NDC |
Physics [ 420 ]
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 2005-03-01 |
| Rights |
Copyright (c) 2005 American Physical Society
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[NCID] AA11187113
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.71.094108
[DOI] http://dx.doi.org/10.1103/PhysRevB.71.094108
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