High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors
Microelectronic Engineering Volume 83 Issue 4-9
Page 1740-1744
published_at 2006-04
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| File | |
| Title ( eng ) |
High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors
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| Creator |
Sunami Hideo
Yoshikawa Koji
Okuyama Kiyoshi
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| Source Title |
Microelectronic Engineering
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| Volume | 83 |
| Issue | 4-9 |
| Start Page | 1740 |
| End Page | 1744 |
| Abstract |
Besides further scaling of the metal-oxide-semiconductor transistor, which has continuously been achieved for these 35 years in large-scale integration, three-dimensional transistors having fin-type silicon substrate have been increasingly important for its promising potential to ultimately scaled ones. In this research, a beam-channel transistor featuring very-tall silicon beam has been proposed and its structure formation techniques are summarized in this article. They are tall beam formation, conformal gate formation, uniform source/drain formation, and conformal metal contact.
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| Keywords |
Beam channel
High-aspect ratio
Metal-oxide-semiconductor transistor
Plasma doping
Three-dimension
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| NDC |
Electrical engineering [ 540 ]
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
Elsevier B.V.
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| Date of Issued | 2006-04 |
| Rights |
Copyright (c) 2006 Elsevier B.V.
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| Publish Type | Author’s Original |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0167-9317
[DOI] 10.1016/j.mee.2006.01.270
[NCID] AA10693521
[DOI] http://dx.doi.org/10.1016/j.mee.2006.01.270
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