Compact Modeling of Gallium-Nitride-based High Electron Mobility Transistor for High-Power Circuit Applications

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Title ( eng )	Compact Modeling of Gallium-Nitride-based High Electron Mobility Transistor for High-Power Circuit Applications
Title ( jpn )	高電力用途における窒化ガリウム高電子移動度トランジスタのコンパクトモデル
Creator	Mizoguchi Takeshi
NDC	Physics [ 420 ]
Language	eng
Resource Type	doctoral thesis
Publish Type	Not Applicable (or Unknown)
Access Rights	open access
Source Identifier	Analysis of GaN High Electron Mobility Transistor Switching Characteristics for High-Power Applications with HiSIM-GaN Compact Model; Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, and Hans JUrgen Mattausch; Japanese Journal of Applied Physics, Vol. 55, 04EG03-1-5, (2016). references Modeling of Field-Plate Effect on Gallium-Nitride-based High Electron Mobility Transistors for High-Power Applications; Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, and Hans Jurgen Mattausch; The Institute of Electronics, Information and Communication Engineers Transactions on Electronics, Vol. E100-C, No. 3, pp. 321-328, (2017). references [DOI] https://doi.org/10.7567/JJAP.55.04EG03 references [DOI] https://doi.org/10.1587/transele.E100.C.321 references
Dissertation Number	甲第7236号
Degree Name	Doctor of Engineering
Date of Granted	2017-03-23
Degree Grantors	広島大学