Highly sensitive ion detection using Si single-electron transistors
Applied Physics Letters 98 巻 12 号
123705- 頁
2011 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Highly sensitive ion detection using Si single-electron transistors
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| 作成者 |
Kudo Takashi
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| 収録物名 |
Applied Physics Letters
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| 巻 | 98 |
| 号 | 12 |
| 開始ページ | 123705 |
| 抄録 |
Si single-electron transistors (SETs) were used for highly sensitive ion detection. A multiple-island channel structure was adapted in the SET for room-temperature operation. Clear Coulomb oscillation and diamonds were observed at room temperature. Using the Coulomb oscillation, clear pH responses of drain current (Id)-gate voltage (Vg) characteristics were obtained despite the existence of Id noise. Because Coulomb oscillations have a possibility to increase the slope of Id over Vg near the half-maximum current of the peaks, high resolving power of ion, and/or biomolecule concentration can be expected. A Si-structure will make it possible to integrate the sensors on a single chip.
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| NDC分類 |
電気工学 [ 540 ]
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Institute of Physics
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| 発行日 | 2011 |
| 権利情報 |
(c) 2011 American Institute of Physics
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0003-6951
[DOI] 10.1063/1.3569148
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.3569148
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