Highly sensitive ion detection using Si single-electron transistors

Applied Physics Letters Volume 98 Issue 12 Page 123705- published_at 2011
アクセス数 : 1035
ダウンロード数 : 269

今月のアクセス数 : 0
今月のダウンロード数 : 0
File
ApplPhysLett_98_123705.pdf 4.29 MB 種類 : fulltext
Title ( eng )
Highly sensitive ion detection using Si single-electron transistors
Creator
Kudo Takashi
Source Title
Applied Physics Letters
Volume 98
Issue 12
Start Page 123705
Abstract
Si single-electron transistors (SETs) were used for highly sensitive ion detection. A multiple-island channel structure was adapted in the SET for room-temperature operation. Clear Coulomb oscillation and diamonds were observed at room temperature. Using the Coulomb oscillation, clear pH responses of drain current (Id)-gate voltage (Vg) characteristics were obtained despite the existence of Id noise. Because Coulomb oscillations have a possibility to increase the slope of Id over Vg near the half-maximum current of the peaks, high resolving power of ion, and/or biomolecule concentration can be expected. A Si-structure will make it possible to integrate the sensors on a single chip.
NDC
Electrical engineering [ 540 ]
Language
eng
Resource Type journal article
Publisher
American Institute of Physics
Date of Issued 2011
Rights
(c) 2011 American Institute of Physics
Publish Type Version of Record
Access Rights open access
Source Identifier
[ISSN] 0003-6951
[DOI] 10.1063/1.3569148
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.3569148