Highly sensitive ion detection using Si single-electron transistors
Applied Physics Letters Volume 98 Issue 12
Page 123705-
published_at 2011
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Title ( eng ) |
Highly sensitive ion detection using Si single-electron transistors
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Creator |
Kudo Takashi
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Source Title |
Applied Physics Letters
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Volume | 98 |
Issue | 12 |
Start Page | 123705 |
Abstract |
Si single-electron transistors (SETs) were used for highly sensitive ion detection. A multiple-island channel structure was adapted in the SET for room-temperature operation. Clear Coulomb oscillation and diamonds were observed at room temperature. Using the Coulomb oscillation, clear pH responses of drain current (Id)-gate voltage (Vg) characteristics were obtained despite the existence of Id noise. Because Coulomb oscillations have a possibility to increase the slope of Id over Vg near the half-maximum current of the peaks, high resolving power of ion, and/or biomolecule concentration can be expected. A Si-structure will make it possible to integrate the sensors on a single chip.
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NDC |
Electrical engineering [ 540 ]
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Language |
eng
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Resource Type | journal article |
Publisher |
American Institute of Physics
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Date of Issued | 2011 |
Rights |
(c) 2011 American Institute of Physics
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Publish Type | Version of Record |
Access Rights | open access |
Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.3569148
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.3569148
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