Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

Nakajima Anri

Kudo Takashi

Ito Takashi

Applied Physics Letters

Metal-oxide-semiconductor field-effect transistors (MOSFETs) with a functional gate, which enables self-adjustment of threshold voltage (Vth), were proposed for ultralow power operation and fabricated with conventional complementary metal-oxide-semiconductor (CMOS) technology. In the on-current state of fabricated nMOSFETs, electron ejection from the charge trap layer by direct tunneling makes Vth low and increases on-current further. In the off-current state, electron injection into the charge trap layer makes Vth high and suppresses subthreshold leakage current. Although the characteristic time of electron transfer of the functional gate from on-current state to off-current state is fairly long, the logic mode operating principle has been verified with the experimental device. Reduction of tunnel oxide thickness (Tox) will reduce the time, which will lead to the practical use of the proposed device for CMOS logic application.

電気工学 [ 540 ]

英語

American Institute of Physics

(c) 2011 American Institute of Physics

[ISSN] 0003-6951

[DOI] 10.1063/1.3549178

[NCID] AA00543431

[DOI] http://dx.doi.org/10.1063/1.3549178