Current Oscillations and Domain Instability in Semiconductors
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この文献の参照には次のURLをご利用ください : https://doi.org/10.11501/3119766
File |
diss_ko1436.pdf
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種類 :
fulltext
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Title ( eng ) |
Current Oscillations and Domain Instability in Semiconductors
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Title ( jpn ) |
半導体における電流振動とドメイン不安定性
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Creator |
Oshio Ken-ichi
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Descriptions |
Abstract / p2
Contents / p4 1 Introduction / p1 1.1 Negative Differential Conductivity(NDC) / p2 1.2 Gunn effect / p3 1.3 Gunn effect with impact ionization / p6 1.4 Recombination instability / p7 1.5 Chaos in semiconductors / p8 1.6 Composition of following chapters / p9 2 Chaotic current oscillations in the Gunn-effect device under the dc and the rf bias voltages / p13 2.1 Introduction / p13 2.2 Equations of motion and the method of solution / p14 2.3 The motion under the dc bias voltage / p18 2.4 The motion under the dc and rf bias voltage / p20 3 Non-periodic current oscillations in the Gunn-effect device with the impact-ionization effect / p33 3.1 Introduction / p33 3.2 Equations of motion and the method of solution / p34 3.3 Simulational results / p38 4 Current oscillations induced by recombination instability in semiconductors / p49 4.1 Introduction / p49 4.2 Equations of motion and simulation method / p49 4.3 Simulational results / p54 5 Summary and conclusion / p71 |
NDC |
Electrical engineering [ 540 ]
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Language |
eng
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Resource Type | doctoral thesis |
Rights |
Copyright(c) by Author
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Publish Type | Not Applicable (or Unknown) |
Access Rights | open access |
Dissertation Number | 甲第1436号 |
Degree Name | |
Date of Granted | 1996-03-26 |
Degree Grantors |
広島大学
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