Current Oscillations and Domain Instability in Semiconductors

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Title ( eng )
Current Oscillations and Domain Instability in Semiconductors
Title ( jpn )
半導体における電流振動とドメイン不安定性
Creator
Oshio Ken-ichi
Descriptions
Abstract / p2
Contents / p4
1 Introduction / p1
 1.1 Negative Differential Conductivity(NDC) / p2
 1.2 Gunn effect / p3
 1.3 Gunn effect with impact ionization / p6
 1.4 Recombination instability / p7
 1.5 Chaos in semiconductors / p8
 1.6 Composition of following chapters / p9
2 Chaotic current oscillations in the Gunn-effect device under the dc and the rf bias voltages / p13
 2.1 Introduction / p13
 2.2 Equations of motion and the method of solution / p14
 2.3 The motion under the dc bias voltage / p18
 2.4 The motion under the dc and rf bias voltage / p20
3 Non-periodic current oscillations in the Gunn-effect device with the impact-ionization effect / p33
 3.1 Introduction / p33
 3.2 Equations of motion and the method of solution / p34
 3.3 Simulational results / p38
4 Current oscillations induced by recombination instability in semiconductors / p49
 4.1 Introduction / p49
 4.2 Equations of motion and simulation method / p49
 4.3 Simulational results / p54
5 Summary and conclusion / p71
NDC
Electrical engineering [ 540 ]
Language
eng
Resource Type doctoral thesis
Rights
Copyright(c) by Author
Publish Type Not Applicable (or Unknown)
Access Rights open access
Dissertation Number 甲第1436号
Degree Name
Date of Granted 1996-03-26
Degree Grantors
広島大学