Disilane- and siloxane-bridged biphenylene and bithiophene derivatives as electron-transporting materials in OLEDs
Journal of Organometallic Chemistry 693 巻 23 号
3490-3494 頁
2008-11-01 発行
アクセス数 : 1004 件
ダウンロード数 : 278 件
今月のアクセス数 : 3 件
今月のダウンロード数 : 1 件
この文献の参照には次のURLをご利用ください : https://ir.lib.hiroshima-u.ac.jp/00025942
ファイル情報(添付) |
JOrganometChem_693_3490.pdf
143 KB
種類 :
全文
|
タイトル ( eng ) |
Disilane- and siloxane-bridged biphenylene and bithiophene derivatives as electron-transporting materials in OLEDs
|
作成者 |
Ohara Sayaka
Nakayama Naohiro
Kunai Atsutaka
Lee In-Sook
Kwak Young-Woo
|
収録物名 |
Journal of Organometallic Chemistry
|
巻 | 693 |
号 | 23 |
開始ページ | 3490 |
終了ページ | 3494 |
抄録 |
Optical, electrochemical, and electron-transporting properties of disilane- and siloxane-bridged biphenyl and bithiophene derivatives were investigated, in comparison with those of the monosilane-bridged analogues (siloles). The UV spectra and cyclic voltammograms indicated that elongation of the silicon bridge suppresses the π-conjugation, in accordance with the results of DFT calculations. The DFT calculations indicated also that the dislane-bridged biphenyl and siloxane-bridged bithiophene should have the low-lying HOMOs and LUMOs. The electron transporting properties were evaluated by the performance of triple-layered OLEDs having vapor deposited films of the Si-bridged compound, Alq3, and TPD, as the electron-transport, emitter, and hole-transport, respectively. Of these, the device with a disilane-bridged biphenyl exhibited the high performance with the maximum current density of 590 mA/cm2 at the applied electric field of 12 × 107 V/m (applied bias voltage = 12 V) and the maximum luminance of 22,000 cd/m2 at 13 × 107 V/m.
|
著者キーワード |
Silole
OLED
Electron-transport
Theoretical calculation
|
NDC分類 |
化学 [ 430 ]
|
言語 |
英語
|
資源タイプ | 学術雑誌論文 |
出版者 |
Elsevier Science S.A.
|
発行日 | 2008-11-01 |
権利情報 |
Copyright (c) 2008 Elsevier B.V.
|
出版タイプ | Author’s Original(十分な品質であるとして、著者から正式な査読に提出される版) |
アクセス権 | オープンアクセス |
収録物識別子 |
[ISSN] 0022-328X
[DOI] 10.1016/j.jorganchem.2008.08.018
[NCID] AA00704122
[DOI] http://dx.doi.org/10.1016/j.jorganchem.2008.08.018
|