All-chromium single electron transistor fabricated with plasma oxidation

Physica B: Condensed Matter Volume 383 Issue 1 Page 57-58 published_at 2006-08-15

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Title ( eng )	All-chromium single electron transistor fabricated with plasma oxidation
Creator	Kubota T. Yagi Ryuta
Source Title	Physica B: Condensed Matter
Volume	383
Issue	1
Start Page	57
End Page	58
Abstract	We fabricated all-chromium single electron transistor using electron beam lithography and shadow evaporation, employing a plasma oxidation technique. This improved the controllability of the tunnel resistance determined in the oxidation process. We measured the device characteristics of the fabricated SET transistor at 90 mK and found that Coulomb blockade with little leakage current, showing excellent quality of the tunnel barrier.
Keywords	SET transistor plasma oxidation
NDC	Physics [ 420 ]
Language	eng
Resource Type	conference paper
Publisher	Elsevier B.V.
Date of Issued	2006-08-15
Rights	Copyright (c) 2006 Elsevier B.V.
Publish Type	Author’s Original
Access Rights	open access
Source Identifier	[NCID] AA10673546 [ISSN] 0921-4526 [DOI] 10.1016/j.physb.2006.03.055 [DOI] http://dx.doi.org/10.1016/j.physb.2006.03.055 isVersionOf