Electron tunneling experiments on La-substituted Kondo-semiconductor CeRhAs
Physica B: Condensed Matter Volume 383 Issue 1
Page 26-27
published_at 2006-08-15
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| File | |
| Title ( eng ) |
Electron tunneling experiments on La-substituted Kondo-semiconductor CeRhAs
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| Creator |
Sasakawa Tetsuya
Gabovich Alexander M.
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| Source Title |
Physica B: Condensed Matter
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| Volume | 383 |
| Issue | 1 |
| Start Page | 26 |
| End Page | 27 |
| Abstract |
Polycrystalline Ce1-xLaxRhAs is investigated by means of break-junction tunneling. On Ce substituted by La (x=0.01), a pronounced hump structure is developed at the bias ±0.25 V with a shallow dip on it. The hump emergence is consistent with a drastic reduction in the resistivity. These facts give direct evidence for the appearance of mid-gap states near the Fermi energy by a small La substitution for Ce in CeRhAs.
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| Keywords |
Electron tunneling
Break junction
Kondo semiconductor
Energy gap
Ce1-xLaxRhAs
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| NDC |
Physics [ 420 ]
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
Elsevier
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| Date of Issued | 2006-08-15 |
| Rights |
Copyright (c) 2006 Elsevier B.V.
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| Publish Type | Author’s Original |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0921-4526
[DOI] 10.1016/j.physb.2006.03.041
[NCID] AA10673546
[DOI] http://dx.doi.org/10.1016/j.physb.2006.03.041
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