Effects of annealing of poly(3-hexylthiophene) film on the performance of double-layered EL devices of ITO/polymer/Alq3/Mg-Ag

Synthetic Metals 157 巻 2-3 号 104-108 頁 2007 発行
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タイトル ( eng )
Effects of annealing of poly(3-hexylthiophene) film on the performance of double-layered EL devices of ITO/polymer/Alq3/Mg-Ag
作成者
Tada Yosuke
Kunai Atsutaka
Kohno Atsushi
Kunugi Yoshihito
収録物名
Synthetic Metals
157
2-3
開始ページ 104
終了ページ 108
抄録
Double layer devices with a structure of ITO/pHT/Alq3/Mg-Ag (ITO = indium tin oxide, pHT = regio-regular or random poly(3-hexylthiophene), Alq3 = tris(8-hydroxyquinoline)aluminium) were fabricated. The device with a random pHT film emitted a green-yellow light in all voltage region, while that having a regio-regular pHT film exhibited a color change from green to red by applying the bias voltage higher than 15 V. Annealing the pHT films prepared on ITO at 200 °C for 1 h in nitrogen, prior to vapor-deposition of the Alq3 layer, improved the device performance with lowering the onset bias voltage by 2-3 V. The EL colors and spectra were also affected by annealing. X-ray reflectivity measurements before and after annealing the pHT film on ITO indicated increased density of the pHT layer and structural changes in the pHT/ITO interface by annealing, which seems to be responsible for the improved EL device performance
著者キーワード
Annealing
EL device
Hole-transport
Interface
Polythiophene
Regio-regularity
X-ray reflectivity
NDC分類
化学 [ 430 ]
言語
英語
資源タイプ 学術雑誌論文
出版者
Elsevier Science SA
発行日 2007
権利情報
Copyright(c) 2007 Elsevier Science SA
出版タイプ Author’s Original(十分な品質であるとして、著者から正式な査読に提出される版)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 0379-6779
[DOI] 10.1016/j.synthmet.2006.12.009
[NCID] AA00446016
[DOI] http://dx.doi.org/10.1016/j.synthmet.2006.12.009 ~の異版である