Effects of annealing of poly(3-hexylthiophene) film on the performance of double-layered EL devices of ITO/polymer/Alq3/Mg-Ag
Synthetic Metals 157 巻 2-3 号
104-108 頁
2007 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Effects of annealing of poly(3-hexylthiophene) film on the performance of double-layered EL devices of ITO/polymer/Alq3/Mg-Ag
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| 作成者 |
Tada Yosuke
Kunai Atsutaka
Kohno Atsushi
Kunugi Yoshihito
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| 収録物名 |
Synthetic Metals
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| 巻 | 157 |
| 号 | 2-3 |
| 開始ページ | 104 |
| 終了ページ | 108 |
| 抄録 |
Double layer devices with a structure of ITO/pHT/Alq3/Mg-Ag (ITO = indium tin oxide, pHT = regio-regular or random poly(3-hexylthiophene), Alq3 = tris(8-hydroxyquinoline)aluminium) were fabricated. The device with a random pHT film emitted a green-yellow light in all voltage region, while that having a regio-regular pHT film exhibited a color change from green to red by applying the bias voltage higher than 15 V. Annealing the pHT films prepared on ITO at 200 °C for 1 h in nitrogen, prior to vapor-deposition of the Alq3 layer, improved the device performance with lowering the onset bias voltage by 2-3 V. The EL colors and spectra were also affected by annealing. X-ray reflectivity measurements before and after annealing the pHT film on ITO indicated increased density of the pHT layer and structural changes in the pHT/ITO interface by annealing, which seems to be responsible for the improved EL device performance
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| 著者キーワード |
Annealing
EL device
Hole-transport
Interface
Polythiophene
Regio-regularity
X-ray reflectivity
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| NDC分類 |
化学 [ 430 ]
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
Elsevier Science SA
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| 発行日 | 2007 |
| 権利情報 |
Copyright(c) 2007 Elsevier Science SA
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| 出版タイプ | Author’s Original（十分な品質であるとして、著者から正式な査読に提出される版） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0379-6779
[DOI] 10.1016/j.synthmet.2006.12.009
[NCID] AA00446016
[DOI] http://dx.doi.org/10.1016/j.synthmet.2006.12.009
～の異版である
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