Atomistic mechanism of nucleation and growth of voids in Cu studied by computer simulation

Materials Research Society Symposium - Proceedings 650 巻 R3.23.1-R3.23.6 頁 2001 発行
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タイトル ( eng )
Atomistic mechanism of nucleation and growth of voids in Cu studied by computer simulation
作成者
Shimomura Yoshiharu
Mukouda Ichiro
収録物名
Materials Research Society Symposium - Proceedings
650
開始ページ R3.23.1
終了ページ R3.23.6
抄録
Shimomura and Mukouda [1] reported that a void could be formed by clustering of only vacancy. In fission-neutron-irradiated copper at 300°C to 7 x 10 17n/cm2 at Kyoto University Reactor (KUR), the number density of voids exceeds the number density of hydrogen and helium atoms that are generated by the transmutation reaction [2]. A copper foil irradiated in this experiment was prepared to be a very low content of residual gas atoms by melting in highly evacuated vacuum. It is reported by the present authors that vacancy clusters move as a cluster at high temperature and coalesce to a larger cluster [3, 4]. The objective of the present work is to show how a vacancy cluster can grow to a void by clustering of only vacancies at high temperature. This means that a void can be formed without an inclusion of gas atoms in vacancy clusters in neutron-irradiated copper at high temperature. Of course if gas atoms are included in a small vacancy cluster, a void formation is promoted significantly as reported on experiments of multi-ion beam irradiated copper [5].
言語
英語
資源タイプ 学術雑誌論文
出版者
Materials Research Society
発行日 2001
権利情報
Copyright (c) 2001 Materials Research Society.
出版タイプ Author’s Original(十分な品質であるとして、著者から正式な査読に提出される版)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 0272-9172
[NCID] BA53584752