Atomistic mechanism of nucleation and growth of voids in Cu studied by computer simulation
Materials Research Society Symposium - Proceedings Volume 650
Page R3.23.1-R3.23.6
published_at 2001
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Title ( eng ) |
Atomistic mechanism of nucleation and growth of voids in Cu studied by computer simulation
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Creator |
Shimomura Yoshiharu
Mukouda Ichiro
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Source Title |
Materials Research Society Symposium - Proceedings
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Volume | 650 |
Start Page | R3.23.1 |
End Page | R3.23.6 |
Abstract |
Shimomura and Mukouda [1] reported that a void could be formed by clustering of only vacancy. In fission-neutron-irradiated copper at 300°C to 7 x 10 17n/cm2 at Kyoto University Reactor (KUR), the number density of voids exceeds the number density of hydrogen and helium atoms that are generated by the transmutation reaction [2]. A copper foil irradiated in this experiment was prepared to be a very low content of residual gas atoms by melting in highly evacuated vacuum. It is reported by the present authors that vacancy clusters move as a cluster at high temperature and coalesce to a larger cluster [3, 4]. The objective of the present work is to show how a vacancy cluster can grow to a void by clustering of only vacancies at high temperature. This means that a void can be formed without an inclusion of gas atoms in vacancy clusters in neutron-irradiated copper at high temperature. Of course if gas atoms are included in a small vacancy cluster, a void formation is promoted significantly as reported on experiments of multi-ion beam irradiated copper [5].
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Language |
eng
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Resource Type | journal article |
Publisher |
Materials Research Society
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Date of Issued | 2001 |
Rights |
Copyright (c) 2001 Materials Research Society.
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Publish Type | Author’s Original |
Access Rights | open access |
Source Identifier |
[ISSN] 0272-9172
[NCID] BA53584752
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