Atomistic mechanism of nucleation and growth of voids in Cu studied by computer simulation

Materials Research Society Symposium - Proceedings Volume 650 Page R3.23.1-R3.23.6 published_at 2001
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Title ( eng )
Atomistic mechanism of nucleation and growth of voids in Cu studied by computer simulation
Creator
Shimomura Yoshiharu
Mukouda Ichiro
Source Title
Materials Research Society Symposium - Proceedings
Volume 650
Start Page R3.23.1
End Page R3.23.6
Abstract
Shimomura and Mukouda [1] reported that a void could be formed by clustering of only vacancy. In fission-neutron-irradiated copper at 300°C to 7 x 10 17n/cm2 at Kyoto University Reactor (KUR), the number density of voids exceeds the number density of hydrogen and helium atoms that are generated by the transmutation reaction [2]. A copper foil irradiated in this experiment was prepared to be a very low content of residual gas atoms by melting in highly evacuated vacuum. It is reported by the present authors that vacancy clusters move as a cluster at high temperature and coalesce to a larger cluster [3, 4]. The objective of the present work is to show how a vacancy cluster can grow to a void by clustering of only vacancies at high temperature. This means that a void can be formed without an inclusion of gas atoms in vacancy clusters in neutron-irradiated copper at high temperature. Of course if gas atoms are included in a small vacancy cluster, a void formation is promoted significantly as reported on experiments of multi-ion beam irradiated copper [5].
Language
eng
Resource Type journal article
Publisher
Materials Research Society
Date of Issued 2001
Rights
Copyright (c) 2001 Materials Research Society.
Publish Type Author’s Original
Access Rights open access
Source Identifier
[ISSN] 0272-9172
[NCID] BA53584752