Core-level photoemission study of Ga1-xMnxAs

Physical Review B - Condensed Matter and Materials Physics 58 巻 8 号 R4211-R4214 頁 1998-08-15 発行
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タイトル ( eng )
Core-level photoemission study of Ga1-xMnxAs
作成者
Okabayashi Jun
Rader Oliver
Mizokawa Takashi
Fujimori Atsushi
Hayashi Toshiaki
Tanaka Masaaki
収録物名
Physical Review B - Condensed Matter and Materials Physics
58
8
開始ページ R4211
終了ページ R4214
抄録
We have studied the electronic structure of Mn impurities in GaAs by Mn 2p core-level photoemission spectroscopy. From cluster-model analysis assuming the neutral (Mn3+) or negatively ionized (Mn2+) ground state, electronic structure parameters have been obtained. In either case, the Mn d electron number is evaluated to be ∼5 using the obtained parameters, meaning that the neutral Mn3+ impurity, if it exists, consists of the Mn 3d5 configuration and a valence hole bound to it through p-d hybridization and/or Coulomb interaction. We discuss the exchange interaction between the Mn local spin and the valence hole as well as the stability of the neutral impurity against the ionization of the valence hole.
言語
英語
資源タイプ 学術雑誌論文
出版者
American Physical Society
発行日 1998-08-15
権利情報
Copyright (c) 1998 The American Physical Society.
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 0163-1829
[DOI] 10.1103/PhysRevB.58.R4211
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1063/1.2162752