Core-level photoemission study of Ga1-xMnxAs
Physical Review B - Condensed Matter and Materials Physics 58 巻 8 号
R4211-R4214 頁
1998-08-15 発行
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ファイル情報(添付) |
PhysRevB_58_R4211.pdf
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種類 :
全文
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タイトル ( eng ) |
Core-level photoemission study of Ga1-xMnxAs
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作成者 |
Okabayashi Jun
Rader Oliver
Mizokawa Takashi
Fujimori Atsushi
Hayashi Toshiaki
Tanaka Masaaki
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収録物名 |
Physical Review B - Condensed Matter and Materials Physics
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巻 | 58 |
号 | 8 |
開始ページ | R4211 |
終了ページ | R4214 |
抄録 |
We have studied the electronic structure of Mn impurities in GaAs by Mn 2p core-level photoemission spectroscopy. From cluster-model analysis assuming the neutral (Mn3+) or negatively ionized (Mn2+) ground state, electronic structure parameters have been obtained. In either case, the Mn d electron number is evaluated to be ∼5 using the obtained parameters, meaning that the neutral Mn3+ impurity, if it exists, consists of the Mn 3d5 configuration and a valence hole bound to it through p-d hybridization and/or Coulomb interaction. We discuss the exchange interaction between the Mn local spin and the valence hole as well as the stability of the neutral impurity against the ionization of the valence hole.
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言語 |
英語
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資源タイプ | 学術雑誌論文 |
出版者 |
American Physical Society
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発行日 | 1998-08-15 |
権利情報 |
Copyright (c) 1998 The American Physical Society.
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出版タイプ | Version of Record(出版社版。早期公開を含む) |
アクセス権 | オープンアクセス |
収録物識別子 |
[ISSN] 0163-1829
[DOI] 10.1103/PhysRevB.58.R4211
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1063/1.2162752
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