Tunneling Evidence for the Quasiparticle Gap in Kondo Semiconductors CeNiSn and CeRhSb
Physical Review Letters Volume 75 Issue 23
Page 4262-4265
published_at 1995-12-04
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| File | |
| Title ( eng ) |
Tunneling Evidence for the Quasiparticle Gap in Kondo Semiconductors CeNiSn and CeRhSb
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| Creator |
Tanaka Hiroaki
Fujii Hironobu
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| Source Title |
Physical Review Letters
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| Volume | 75 |
| Issue | 23 |
| Start Page | 4262 |
| End Page | 4265 |
| Abstract |
The Kondo semiconductors CeNiSn and CeRhSb were investigated by tunneling spectroscopy using a break junction. The differential conductances at 2-4 K show energy gaps of 8-10 and 20-27 meV for CeNiSn and CeRhSb, respectively, which are comparable to the Kondo temperatures. The tunneling spectra give clear evidence for a strong gap anisotropy. With increasing temperature, the zero-bias conductance displays a crossover from a well-developed gap state to a partial-gap state, and to a Kondo-metallic state.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 1995-12-04 |
| Rights |
Copyright (c) 1995 The American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0031-9007
[DOI] 10.1103/PhysRevLett.75.4262
[NCID] AA00773679
[DOI] http://dx.doi.org/10.1103/PhysRevB.71.214441
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