Effective carrier doping by magnetic field into a pseudogapped state in CeNiSn : A Sn NMR study
Physical Review B - Condensed Matter and Materials Physics 54 巻 9 号
6062-6064 頁
1996-09-01 発行
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PhysRevB_54_6062.pdf
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種類 :
全文
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タイトル ( eng ) |
Effective carrier doping by magnetic field into a pseudogapped state in CeNiSn : A Sn NMR study
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作成者 |
Nakamura Ko-ichi
Kitaoka Yoshio
Asayama Kunisuke
Nakamoto Go
Fujii Hironobu
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収録物名 |
Physical Review B - Condensed Matter and Materials Physics
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巻 | 54 |
号 | 9 |
開始ページ | 6062 |
終了ページ | 6064 |
抄録 |
The magnetic field dependence of the spin-lattice relaxation rate 1/T1 of 119Sn in CeNiSn has been measured down to 20 mK in a field range of 0.2-8 T. (T1T)-1 is constant below 1 K, which depends on the external field in such a manner that its value stays constant to 2 T, while it increases linearly with the field up to 8 T. It is shown that this magnetic field dependence of (T1T)-1 is well explained by the simple scenario that the quasiparticle density of states at the Fermi level is produced by the Zeeman splitting of the up- and down-spin bands, keeping its V-shaped gapped structure unchanged for fields less than 8 T. The present experiment has elucidated that CeNiSn is in a semimetallic ground state with a low carrier density and the application of a magnetic field exceeding 2 T turns out to supply effective carriers.
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言語 |
英語
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資源タイプ | 学術雑誌論文 |
出版者 |
American Physical Society
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発行日 | 1996-09-01 |
権利情報 |
Copyright (c) 1996 The American Physical Society.
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出版タイプ | Version of Record(出版社版。早期公開を含む) |
アクセス権 | オープンアクセス |
収録物識別子 |
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.54.6062
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.68.054416
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