Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation
Applied Physics Letters Volume 90 Issue 10
Page 101119-1-101119-3
published_at 2007-03-09
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| File | |
| Title ( eng ) |
Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation
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| Creator |
Takazato Akihiro
Kamakura Masahumi
Matsui Takashi
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| Source Title |
Applied Physics Letters
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| Volume | 90 |
| Issue | 10 |
| Start Page | 101119-1 |
| End Page | 101119-3 |
| Abstract |
The authors have investigated the dc and terahertz-detection characteristics of the photoconductive antennas made on low-temperature-grown (LTG) Inx Ga1-x As (0.4 < x < 0.53). It was found that the resistivity of the LTG In0.4 Ga0.6 As can be as high as 700 cm, with which the resistance of the antenna becomes higher than 3 M. Terahertz waves were detected by the antennas with the pulse excitation at 1.56 μm, with a spectral range exceeding 3 THz, and a dynamic range of about 55 dB. The results also indicate that the photocarrier dynamics depend on the In content.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 2007-03-09 |
| Rights |
Copyright (c) 2007 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.2712503
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.2712503
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