Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation
Applied Physics Letters 90 巻 10 号
101119-1-101119-3 頁
2007-03-09 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation
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| 作成者 |
Takazato Akihiro
Kamakura Masahumi
Matsui Takashi
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| 収録物名 |
Applied Physics Letters
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| 巻 | 90 |
| 号 | 10 |
| 開始ページ | 101119-1 |
| 終了ページ | 101119-3 |
| 抄録 |
The authors have investigated the dc and terahertz-detection characteristics of the photoconductive antennas made on low-temperature-grown (LTG) Inx Ga1-x As (0.4 < x < 0.53). It was found that the resistivity of the LTG In0.4 Ga0.6 As can be as high as 700 cm, with which the resistance of the antenna becomes higher than 3 M. Terahertz waves were detected by the antennas with the pulse excitation at 1.56 μm, with a spectral range exceeding 3 THz, and a dynamic range of about 55 dB. The results also indicate that the photocarrier dynamics depend on the In content.
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Institute of Physics
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| 発行日 | 2007-03-09 |
| 権利情報 |
Copyright (c) 2007 American Institute of Physics.
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0003-6951
[DOI] 10.1063/1.2712503
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.2712503
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