Charge density distribution of transparent p-type semiconductor (LaO)CuS
Applied Physics Letters Volume 90 Issue 16
Page 161916-1-161916-3
published_at 2007-04-19
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| File | |
| Title ( eng ) |
Charge density distribution of transparent p-type semiconductor (LaO)CuS
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| Creator |
Takase Kouichi
Sato Ken
Shoji Osamu
Takano Yoshiki
Sekizawa Kazuko
Goto Manabu
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| Source Title |
Applied Physics Letters
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| Volume | 90 |
| Issue | 16 |
| Start Page | 161916-1 |
| End Page | 161916-3 |
| Abstract |
The charge density distributions of layered oxysulfide (LaO)CuS, known as a p-type transparent semiconductor, have been investigated by analyzing the synchrotron radiation powder diffraction profile with the maximum entropy method/Rietveld method. The bonding character of the Cu–S bond is revealed to be covalent. Meanwhile, the O–La bonding has both ionic and covalent characters. The number of electrons estimated by integrating the charge density around each atom gave direct evidence that each CuS and LaO layer is electrically almost neutral.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Institute of Physics
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| Date of Issued | 2007-04-19 |
| Rights |
Copyright (c) 2007 American Institute of Physics.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0003-6951
[DOI] 10.1063/1.2724891
[NCID] AA00543431
[DOI] http://dx.doi.org/10.1063/1.2724891
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