Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy
Physical Review B - Condensed Matter and Materials Physics Volume 64 Issue 17
Page 172504-
published_at 2001-11-01
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| File | |
| Title ( eng ) |
Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy
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| Creator |
Yokoya T.
Fukushima A.
Kiss T.
Kobayashi K.
Shin S.
Moriguchi K.
Shintani A.
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 64 |
| Issue | 17 |
| Start Page | 172504 |
| Abstract |
We study the electronic structure and superconducting transition of silicon clathrate Ba8Si46 (Tc=8 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/kBTc=3.51]. Fine structures associated with phonons are observed within 70 meV of EF. These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.
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| NDC |
Physics [ 420 ]
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 2001-11-01 |
| Rights |
Copyright (c) 2001 American Physical Society
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[NCID] AA11187113
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.64.172504
[DOI] http://dx.doi.org/10.1103/PhysRevB.64.172504
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