High-pressure Raman study of the iodine-doped silicon clathrate I8Si44I2

Physical Review B - Condensed Matter and Materials Physics 68 巻 21 号 2121021- 頁 2003-12 発行
アクセス数 : 778
ダウンロード数 : 226

今月のアクセス数 : 0
今月のダウンロード数 : 0
ファイル情報(添付)
PhysRevB_68_212102.pdf 62.9 KB 種類 : 全文
タイトル ( eng )
High-pressure Raman study of the iodine-doped silicon clathrate I8Si44I2
作成者
Shimizu Hiroyasu
Kume Tetsuji
Kubota Toyoki
Sasaki Shingo
収録物名
Physical Review B - Condensed Matter and Materials Physics
68
21
開始ページ 2121021
抄録
Raman scattering measurements of an iodine-doped I8Si44I2 clathrate have been performed at pressures up to 28 GPa and 296 K. We found two Raman peaks at 75 and 101 cm-1 associated with the vibrations of guest I atoms inside the host Si cages, and observed some framework vibrations around 120–500 cm-1. These characteristic Raman bands and their pressure dependence are investigated in consideration of our recent Ba8Si46 studies. The lowest-frequency framework vibration at 133 cm-1 shows the softening with pressure, which seems to be the common feature of Si clathrates. A strong and broad Raman band centered at 461 cm-1 is identified to the highest-frequency framework vibration, which is likely intensified and broadened by the considerable framework distortion due to the replacement of framework Si with larger I atom. No obvious pressure-induced phase transition was found up to 28 GPa. The guest-host interactions are investigated by the present vibrational properties and are compared with those of previous neutron studies of I8Si44I2.
NDC分類
物理学 [ 420 ]
言語
英語
資源タイプ 学術雑誌論文
出版者
American Physical Society
発行日 2003-12
権利情報
Copyright (c) 2003 American Physical Society
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[NCID] AA11187113
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.68.212102
[DOI] http://dx.doi.org/10.1103/PhysRevB.68.212102