Suppression of particle generation in a plasma process using a sine-wave modulated rf plasma

Journal of Nanoparticle Research 8 巻 3-4 号 395-403 頁 2006-08 発行
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タイトル ( eng )
Suppression of particle generation in a plasma process using a sine-wave modulated rf plasma
作成者
Kashihara Nobuki
Setyawan Heru
Hayashi Yutaka
Kim Chan Soo
Winardi Sugeng
収録物名
Journal of Nanoparticle Research
8
3-4
開始ページ 395
終了ページ 403
抄録
Sine-wave modulated rf plasma has been used to control particle generation and growth in a plasma-enhanced chemical vapor deposition of silicon dioxide thin films using TEOS/O2. The density and the size of particles generated in the plasma are greatly reduced when the plasma is modulated with sine-wave modulation at low modulation frequency (<1000 Hz). In addition, particle contamination on the films is significantly reduced also for nanoparticles, and the film growth rates at the range of modulation frequencies where particle generation are greatly reduced do not decrease appreciably. Compared to its counterpart pulse-wave modulation plasma, the sine-wave modulation plasma has demonstrated a better performance in terms of reduction of particle generation and film contamination, and of film growth rate. Thus, the sine-wave modulation plasma has shown as a promising method to be applied in the production of thin film with a high deposition rate and a low particle contamination.
著者キーワード
Nanoparticle
Particle generation control
Plasma reactor
Sine-wave modulation
NDC分類
化学 [ 430 ]
言語
英語
資源タイプ 学術雑誌論文
出版者
Springer
発行日 2006-08
権利情報
Copyright (c) 2006 Springer "The original publication is available at www.springerlink.com"
出版タイプ Author’s Original(十分な品質であるとして、著者から正式な査読に提出される版)
アクセス権 オープンアクセス
収録物識別子
[DOI] 10.1007/s11051-005-9005-1
[ISSN] 1388-0764
[NCID] AA11551748
[DOI] http://dx.doi.org/10.1007/s11051-005-9005-1 ~の異版である