High-resolution photoemission study of the temperature-dependent c-f hybridization gap in the Kondo semiconductor YbB12
Physical Review B 73 巻
033202- 頁
2006 発行
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PhysRevB033202.pdf
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全文
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タイトル ( eng ) |
High-resolution photoemission study of the temperature-dependent c-f hybridization gap in the Kondo semiconductor YbB12
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作成者 |
Takeda Yukiharu
Arita Masashi
Higashiguchi Mitsuharu
Iga Fumitoshi
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収録物名 |
Physical Review B
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巻 | 73 |
開始ページ | 033202 |
抄録 |
The temperature-dependent metal-to-insulator transition in the Kondo semiconductor YbB12 single crystal has been studied by means of high-resolution photoemission spectroscopy with a tunable photon energy. An energy gap in the valence band is gradually formed below T1~150 K, and at the same time, the Yb 4f7/2 Kondo peak at 55 meV grows and shifts to a lower binding energy. Below T2~60 K, an additional spectral feature at 15 meV becomes apparent in the Yb 4f and Yb 5d derived spectra, indicating a strongly hybridized character. The 15 meV feature in the Yb 4f derived spectra is intense at the L point of the Brillouin zone and diminishes away from the L point. These results indicate that the energy gap is formed by the hybridization between the Yb 4f and Yb 5d states.
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言語 |
英語
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資源タイプ | 学術雑誌論文 |
出版者 |
American Physical Society
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発行日 | 2006 |
権利情報 |
Copyright (c) 2006 American Physical Society
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出版タイプ | Version of Record(出版社版。早期公開を含む) |
アクセス権 | オープンアクセス |
収録物識別子 |
[ISSN] 1098-0121
[NCID] AA11187113
[DOI] 10.1103/PhysRevB.73.033202
[DOI] http://dx.doi.org/10.1103/PhysRevB.73.033202
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