High-resolution photoemission study of the temperature-dependent c-f hybridization gap in the Kondo semiconductor YbB12

Physical Review B 73 巻 033202- 頁 2006 発行
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タイトル ( eng )
High-resolution photoemission study of the temperature-dependent c-f hybridization gap in the Kondo semiconductor YbB12
作成者
Takeda Yukiharu
Arita Masashi
Higashiguchi Mitsuharu
Iga Fumitoshi
収録物名
Physical Review B
73
開始ページ 033202
抄録
The temperature-dependent metal-to-insulator transition in the Kondo semiconductor YbB12 single crystal has been studied by means of high-resolution photoemission spectroscopy with a tunable photon energy. An energy gap in the valence band is gradually formed below T1~150 K, and at the same time, the Yb 4f7/2 Kondo peak at 55 meV grows and shifts to a lower binding energy. Below T2~60 K, an additional spectral feature at 15 meV becomes apparent in the Yb 4f and Yb 5d derived spectra, indicating a strongly hybridized character. The 15 meV feature in the Yb 4f derived spectra is intense at the L point of the Brillouin zone and diminishes away from the L point. These results indicate that the energy gap is formed by the hybridization between the Yb 4f and Yb 5d states.
言語
英語
資源タイプ 学術雑誌論文
出版者
American Physical Society
発行日 2006
権利情報
Copyright (c) 2006 American Physical Society
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 1098-0121
[NCID] AA11187113
[DOI] 10.1103/PhysRevB.73.033202
[DOI] http://dx.doi.org/10.1103/PhysRevB.73.033202 ~の異版である