Development and Verification of Compact Model for NBTI (Negative Bias Temperature Instability) Effect Observed in p-MOSFET

p-MOSFETにおけるNBTI(Negative Bias Temperature Instability)効果のモデル開発

Ma Chenyue

In the next 10 years, the dimension of semiconductor devices will scale towards 10nm. Consequently the reliability of ULSI circuits and systems faces enlarged challenges due to the introduction of the new materials and non-classical structures. Especially, the negative bias temperature instability (NBTI) effect is one of the most important reliability concerns since it deteriorates the drive-capability of the p-MOSFETs by degrading threshold voltage, drain current, transconductance, resulting in output delay. An accurate predictive NBTI effect model is required for protective circuit design and reduction of design tolerances to save the layout area. At present, numerous NBTI predictive model based on different physical theories have been developed, including hydrogen reaction-diffusion theory, hole-trapping theory, energy profile based theory and so on. However, an effective NBTI model must accurately predict the following features: 1) Long term degradation under DC stress conditions. 2) AC degradation with various frequencies and duty cycles. 3) The recovery characteristic in short term and long term regions. 4) Temperature dependence.……

Chemical technology [ 570 ]

eng

Copyright(c) by Author

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation. Chenyue Ma, Bo Li, Lining Zhang, Feng Liu, Jin He, Xing Zhang, Xinnan Lin. Journal of Computational and Theoretical Nanoscience, vol. 7, pp. 107-114, (2010). references

Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect. Chenyue Ma, Hans Jurgen Mattausch, Masataka Miyake, Kazuya Matsuzawa, Takahiro Iizuka, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinari Kinoshita, Takahiko Arakawa, Jin He, and Mitiko Miura-Mattausch. Japanese Journal of Applied Physics, vol. 51, pp. 02BC07-1-02BC07-5 (2012). references

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. Chenyue Ma, Hans Jurgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, and Mitiko Miura-Mattausch. IEICE, vol. E96-C, accepted (2013) references

広島大学